Crystal growth Electronic transport Semiconductors Thermoelectricity
Issue Date:
2004
Publisher:
Journal of Alloys and Compounds
Citation:
Volume 368, Issue 2-Jan, Page 44-50
Abstract:
The structural and low-temperature thermoelectric properties were investigated in the temperature
range from 4.2 to 300 K of Bi 1.8Sb0.2Te3.0 grown by the gradient freeze method from Te-rich melt of Bi
1.8Sb0.2Te 3.0+??. The composition profile was determined by electron probe microanalysis (EPMA)
measurement to be homogeneous in the center part of the single crystalline ingots. An excess of Te is
segregated at the top of the ingots. A high thermoelectric performance was achieved at low temperature in
the p-type samples. The largest value of the Seebeck coefficient ? of > 500 ? VK-1 was obtained at 200 K
for ?? = 0.259 to give ZT = 1.1. The optimum carrier concentration was determined to be n = 1.6 ?? 1019 cm
-3 for the highest thermoelectric performance. ?? 2003 Elsevier B.V. All rights reserved.
