Study of self-diffusion in silicon at high pressure

Abstract

The process of self-diffusion in semiconductors at high pressure is studied using the statistical moment method including the anharmonicity effects of the lattice vibration. The activation energy, Q, and pre-exponential factor, D 0, of the self-diffusion coefficient are given in an explicit form. The thermodynamic relationships so obtained permit the direct calculation of the activation energy, Q, and pre-exponential factor, D0, in Si at high pressure, both in the high temperature region near the melting temperature, and at low (room temperature) temperatures. The calculated results are shown to be in good agreement with the experimental data. © 2006 The Physical Society of Japan.